Method of forming MOS transistors having gate insulators of different thicknesses

ABSTRACT

The semiconductor device includes (A) a first MOS transistor including (a) a main surface at a part of which recesses are formed, an inner surface of the recesses defining a crystal plane being able to be thermally oxidized at higher speed than the main surface, and (b) an insulator formed on the inner surface of the recesses, the inner surface of the recesses working as a channel region and the insulator working as a gate insulator in the first MOS transistor, and (B) a second MOS transistor in which the main surface works as a channel region and an insulator formed on the main surface works as a gate insulator, the gate insulator of the first MOS transistor having a greater thickness than that of the gate insulator of the second MOS transistor. Thus, above the thinner gate insulator is formed the second MOS transistor, while above the thicker gate insulator is formed the first MOS transistor having a higher breakdown voltage than that of the second MOS transistor. Thus, the number of steps for forming insulators having different thicknesses can be reduced relative to prior methods. In addition, a resist layer is not directly deposited on a gate insulator unlike prior methods, a gate insulator is not contaminated with impurities.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to a semiconductor device and a method forfabricating the same, and more particularly to a MOS transistorincluding gate insulators having different thicknesses and a method forfabricating the same.

2. Description of the Related Art

In response to the requirement of higher integration and higheroperation speed of a semiconductor device, fabrication technologies havebeen developed for fabricating a semiconductor element in more minutesize and in higher density. It is also required for a semiconductordevice to consume lower electrical power and to operate with a lowervoltage. These are for responding to scaling down dimension andportability of an apparatus into which a semiconductor device is to beincorporated, and also for preventing malfunction of a semiconductordevice to be caused due to increased heat derived from a semiconductorelement which is accompanied with higher integration and higheroperation speed of a semiconductor device.

If a voltage for operating a semiconductor element is reduced in orderto lower electrical power consumption and a voltage at which asemiconductor device is operated, an operation speed of thesemiconductor element and hence an operation speed of a semiconductordevice including the semiconductor element is also reduced. One ofapproaches for satisfying the above mentioned requirements contrary toeach other is to use two or more operational voltages in a semiconductordevice.

A plurality of operational voltages are used also for adequately workinga part of circuits constituting a semiconductor device. In such astructure, a semiconductor device is provided with a circuit forincreasing a voltage or a circuit for decreasing a voltage in order togenerate a desired voltage different from a supply voltage to besupplied to a semiconductor device. The use of a plurality of voltagesfor operating a semiconductor device makes it possible to apply aplurality of voltages to a gate insulator of a MOS transistor.

With fabrication of a semiconductor element in more minute size, a gateinsulator is made thinner. However, if a thickness of gate insulators isuniformly reduced, such gate insulators cannot be used for the abovementioned plurality of voltages for operating a semiconductor device.Namely, if the highest voltage among the plurality of operation voltagesis applied, insulating properties of a thinner formed gate insulator isdeteriorated. Thus, it is necessary for a gate insulator of a MOStransistor to which a higher voltage is to be applied to have a greaterthickness, and for a gate insulator of a MOS transistor to which a lowervoltage is to be applied to have a smaller thickness.

For this reason, methods have been developed for forming gate insulatorshaving different thicknesses in a semiconductor device. For instance,Japanese Unexamined Patent Public Disclosure No. 5-291573 laid open onNov. 5, 1993 has suggested one of such methods.

Hereinbelow will be explained the method, suggested in No. 5-291573, forfabricating a MOS transistor including gate insulators having differentthicknesses with reference to FIGS. 1A to 1D which are cross-sectionalviews of a MOS transistor and arranged in an order with whichfabrication steps are carried out.

First, as illustrated in FIG. 1A, a plurality of insulator films 102 forisolating elements from each other are selectively formed on a p-typesemiconductor substrate 101 by LOCOS. Then, the insulative films 102 areselectively etched for removal to thereby form recesses 103 (only one ofthem is illustrated in FIGS. 1A to 1D) at a location where the removedinsulative films 102 used to exist.

Then, a gate insulator having a thickness of about 18 nm is deposited bythermal oxidation on exposed surface of the p-type semiconductorsubstrate 101. Then, as illustrated in FIG. 1B, a resist layer 104 ispatterned by means of photolithography over an area B which includes arecess 103 and in which a MOS transistor having a high breakdown voltageof gate oxide is to be fabricated. Then, a gate insulator disposed in anarea A is etched for removal with the patterned resist layer 104 servingas a mask In the area A, a MOS transistor having an normal breakdownvoltage is to be fabricated. Thus, a first gate insulator 105 is formedin the area B in which a MOS transistor having a high breakdown voltageof gate oxide is to be fabricated.

After the patterned resist layer 104 has been removed, a resultant issubject to thermal oxidation again to thereby form a second gateinsulator 106 having a thickness of about 18 nm in the area A. Asillustrated in FIG. 1C, since in the area B has been already formed thefirst gate insulator 105, the thermal oxidation makes an additionalinsulator over the first gate insulator 105 with the result that a firstinsulator 105a having a thickness of about 25 nm is newly formed in thearea B.

Then, as illustrated in FIG. 1D, a gate electrode 107, a sourcediffusion layer 109, and a drain diffusion layer 110 are formed in aconventional manner for a MOS transistor having a high breakdown voltageof a gate insulator. In the same way, a gate electrode 108, a sourcediffusion layer 111, and a drain diffusion layer 112 are formed in thearea A in a conventional manner for a MOS transistor having a normalbreakdown voltage.

As having been explained, in the prior method, in order to form the gateinsulators 105a and 106 having different thicknesses, the first gateinsulator 105 is first deposited, then the first gate insulator 105 isselectively removed in predetermined areas, and then the second gateinsulator 106 is deposited all over a resultant.

The above mentioned prior method needs two steps for thermally oxidizinga semiconductor substrate, a step of photolithography, and a step foretching a gate insulator in order to form gate insulators havingdifferent thicknesses.

In addition, the above mentioned prior method needs a step forpatterning a resist layer between first and second thermal oxidations information of a gate insulator of a MOS transistor to which a relativelyhigh voltage is to be applied. For this reason, contamination of a gateinsulator with impurities such as heavy metal is not avoidable, andhence quality and/or reliability of a gate insulator is deteriorated.Since the resist layer 104 is in direct contact with the gate insulator105 in the above mentioned method, heavy metal contained in the resistlayer is prone to contaminate the gate insulator 105. Thus, it isnecessary to provide countermeasure for avoiding such contamination.

SUMMARY OF THE INVENTION

In view of the foregoing problems, it is an object of the presentinvention to provide a MOS transistor including gate insulators ofdifferent thicknesses, and a method for fabricating such a MOStransistor.

The invention provides a semiconductor device including (A) a first MOStransistor having (a) a main surface at a part of which recesses areformed, an inner surface of the recesses defining a crystal plane beingable to be thermally oxidized at higher speed than the main surface, and(b) an insulator formed on the inner surface of the recesses, the innersurface of the recesses working as a channel region and the insulatorworking as a gate insulator in the first MOS transistor, and (B) asecond MOS transistor in which the main surface works as a channelregion and an insulator formed on the main surface works as a gateinsulator, the gate insulator of the first MOS transistor having agreater thickness than that of the gate insulator of the second MOStransistor.

The invention further provides a method for fabricating a semiconductordevice, including the steps of (a) selectively forming insulators forisolating elements from each other on a surface of a semiconductorsubstrate, (b) etching surfaces of the semiconductor device and theinsulators to thereby form recesses on the surfaces, (c) thermallyoxidizing the surfaces to thereby form a gate insulator thereon, (d)depositing a thin conductive layer all over a resultant, and (e)anisotropically dry etching the thin conductive layer.

The invention still further provides a method for fabricating asemiconductor device, including the steps of (a) selectively forminginsulators for isolating elements from each other on a surface of asemiconductor substrate, the surface of a semiconductor substrate havinga first crystal plane orientation, (b) etching surfaces of thesemiconductor device and the insulators to thereby form recesses on thesurfaces, the recesses having a surface having a second crystal planeorientation, the second crystal plane orientation having a higherthermal oxidation speed than that of the surface of a semiconductorsubstrate, (c) thermally oxidizing the surfaces to thereby form a gateinsulator thereon, (d) depositing a thin conductive layer all over aresultant, and (e) anisotropically dry etching the thin conductivelayer.

The advantages obtained by the aforementioned present invention will bedescribed hereinbelow.

In the method in accordance with the invention, a silicon substrate isformed on a main surface thereof in predetermined areas with recesses tothereby expose a crystal plane having a higher thermal oxidation speedthan that of the main surface of the substrate. For instance, the mainsurface has (100) orientation, while an inner surface of the recesseshas (110) orientation. Then, the silicon substrate is thermallyoxidized. Thus, two gate insulators having different thicknesses areformed on the main surface of the silicon substrate and on the innersurface of the recesses. Above the thicker gate insulator is formed aMOS transistor having a higher breakdown voltage of a gate insulator,while above the thinner gate insulator is formed a MOS transistor havinga normal breakdown voltage of a gate insulator.

The method in accordance with the invention enables to reduce the numberof steps for forming gate insulators having different thicknesses totwo-thirds or less of the number of steps of prior methods.

In addition, a gate insulator is not in direct contact with a resistlayer unlike prior methods. Thus, contamination of a gate insulator withheavy metal contained in a resist layer can be prevented, and hence highquality of a gate insulator is preserved.

Furthermore, since a MOS transistor having a higher breakdown voltage ofgate oxide is formed in the recesses, it is made easy to accomplish highintegration and high densification of a semiconductor device.

The above and other objects and advantageous features of the presentinvention will be made apparent from the following description made withreference to the accompanying drawings, in which like referencecharacters designate the same or similar parts throughout the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1D are cross-sectional views for showing each step of aprior method for fabricating a semiconductor device, each step beingarranged in an order with which the steps are carried out;

FIG. 2 is a cross-sectional view of a semiconductor device in accordancewith the first embodiment of the invention;

FIGS. 3A to 3C are cross-sectional views showing each step of a methodfor fabricating the semiconductor device illustrated in FIG. 2, eachstep being arranged in an order with which the steps are carried out;

FIG. 4 is a graph showing the dependency of a thickness of a gate oxidelayer on crystal plane orientation;

FIGS. 5A to 5G are cross-sectional views showing each step of a methodfor fabricating a semiconductor device in accordance with the secondembodiment of the invention, each step being arranged in an order withwhich the steps are carried out;

FIG. 6 is a top plan view of a semiconductor device in accordance withthe second embodiment of the invention;

FIG. 7 is a graph showing the dependency of a thickness of a gate oxidelayer on concentration of impurities; and

FIGS. 8A to 8G are cross-sectional views showing each step of a methodfor fabricating a semiconductor device in accordance with the thirdembodiment of the invention, each step being arranged in an order withwhich the steps are carried out.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments in accordance with the present invention will beexplained hereinbelow with reference to drawings.

Embodiment 1!

FIG. 2 illustrates a semiconductor device in accordance with the firstembodiment of the invention. In the semiconductor device, an area A inwhich a MOS transistor having a high breakdown voltage of a gateinsulator is to be fabricated is disposed adjacent to an area B in whicha MOS transistor having a normal breakdown voltage of a gate insulatoris to be fabricated.

On a main surface of a p-type silicon substrate 1 having (100)orientation is formed a plurality of insulators 2 for electricallyisolating adjacent elements from each other. In the area A is formed aV-shaped recess 3 having a (111) orientation crystal plane or a crystalplane equivalent thereto (hereinafter, referred to simply as a (111)orientation crystal plane). The V-shaped recess 3 has a depth up to 0.5μm. The insulators 2 have a depth up to 1 μm. The insulators 2preferably have a greater depth than that of the V-shaped recess 3.

The silicon substrate 1 has a silicon oxide layer thereon formed bythermal oxidation. Thus, along an inner surface of the V-shaped recess 3is oxidized a first gate insulator 4. The first gate insulator 4typically has a thickness up to 20 μm.

On the gate insulator 4 is formed a gate electrode 5 of a MOS transistorhaving a high breakdown voltage of a gate oxide layer. At opposite sidesof the V-shaped recess 3 is formed a source diffusion layer 6 and adrain diffusion layer 7.

On the other hand, a MOS transistor having a normal breakdown voltage ofa gate insulator is formed on a flat main surface of the siliconsubstrate 1 within the area B. As illustrated in FIG. 2, a second gateinsulator 4a is formed on a flat surface of the silicon substrate 1, anda gate electrode 5a is formed on the second gate insulator 4a. Atopposite sides of the gate electrodes 5a are formed a source diffusionlayer 6a and a drain diffusion layer 7a. Thus, a normal MOS transistoris completed. The second gate insulator 4a is designed to have a smallerthickness than that of the first gate insulator 4.

A protection insulator 8 is formed in a thermal oxidation step to becarried out for depositing the first and second gate insulators 4 and4a, and is to be used for ion implantation of impurities therethroughfor forming source/drain diffusion layers therebelow.

Since the first gate insulator 4 has a greater thickness than athickness of the second gate insulator 4a, it is possible to apply ahigher voltage to the gate electrode 5 than that of the gate electrode5a.

In addition, since a channel region of a MOS transistor having a highbreakdown voltage of a gate insulator is formed on an inner surface ofthe V-shaped recess 3, the MOS transistor can obtain a longer effectivechannel length than that of a MOS transistor formed on a flat surface ofa silicon substrate. For this reason, even if a thickness of the gateinsulator is formed thicker, the MOS transistor does scarcely receiveinfluence of short channel effect, and hence MOS transistor propertiesare not deteriorated.

Hereinbelow will be explained a method for fabricating a semiconductordevice including the above mentioned MOS transistor having a highbreakdown voltage of a gate insulator, with reference to FIGS. 3A to 3C.FIGS. 3A to 3C are arranged in an order with which a method forfabricating a semiconductor device in accordance with the firstembodiment of the invention is carried out. In an area A is to be formeda MOS transistor having a high breakdown voltage of a gate insulator,while in an area B is to be formed a MOS transistor having a normalbreakdown voltage of a gate insulator.

First, as illustrated in FIG. 3A, a plurality of the insulators 2 forisolating elements from each other are selectively formed on a mainsurface of the p-type silicon substrate having (100) orientation tothereby define the areas A and B. The insulators 2 are formed by formingtrenches having a depth in the range of 0.5 μm to 1 μm in predeterminedareas on a main surface of the silicon substrate 1, and subsequently byfilling the trenches with insulative material such as silicon dioxide.

Then, an oxide layer 8a is patterned on the main surface of the siliconsubstrate 1 so that only predetermined areas are exposed. As will bementioned later, a MOS transistor having a high breakdown voltage of agate oxide layer is formed within the predetermined areas. Then, thesilicon substrate 1 is etched with the mask oxide layer 8a serving as amask. The etching is carried out by soaking the silicon substrate 1 intoa solvent containing hydrazine (NH₂.NH₂) or potassium hydroxide (KOH)therein. By the etching of the silicon substrate 1, only (111) orientedcrystal planes are kept to remain, and there are formed V-shapedrecesses 3 (only one of them is illustrated in FIGS. 1A to 1D). Anexposed surface of the V-shaped recess 3 is (111) oriented crystalplane.

Then, the oxide layer 8a is removed to thereby expose a flat mainsurface of the silicon substrate 1 having (100) orientation as well asthe slant surface of the V-shaped recess 3 having (111) orientation.

Then, as illustrated in FIG. 3B, the silicon substrate 1 is thermallyoxidized. By the thermal oxidation, a first gate insulator 4 is formedon the slant surface of the V-shaped recess 3 having (111) orientation.At the same time, a second gate insulator 4a is also formed on the flatmain surface of the silicon surface 1 having (100) orientation. Thesegate insulators 4 and 4a are composed of silicon dioxide. The first gateinsulator 4 has a greater thickness than that of the second gateinsulator 4a.

Such a difference in gate insulator thickness is caused due to adifference in crystal plane of single crystal silicon. Hereinbelow isexplained a mechanism about how such a difference in gate insulatorthickness is produced, with reference to FIG. 4. FIG. 4 shows arelationship between thermal oxidation time and a thickness of a silicondioxide layer grown on crystal planes having (100), (110), and (111) Siorientations. Thermal oxidation temperature is 800 degrees centigrade,and atmospheric gas for oxidation is H₂ O. As is obvious from FIG. 4,thermal oxidation speed is greatest in (111) orientation, and smallestin (100) orientation. That is, thermal oxidation speed is represented asfollows:

    (111)>(110)>(100)

For instance, within a period of time in which a silicon oxide layerhaving a thickness of about 15 nm is formed on (111) oriented crystalplane, about 13 nm and about 10 nm thick silicon oxide layers are formedon (110) and (100) oriented crystal planes, respectively.

A difference in a silicon dioxide layer thickness caused due to crystalplanes of single crystal silicon becomes greater as thermal oxidationtemperature is smaller. For instance, when thermal oxidation temperatureis 700 degrees centigrade, within a period of time in which a silicondioxide layer having a thickness of about 15 nm is formed on (111)oriented crystal plane, about 12 nm and about 7 nm thick silicon dioxidelayers are formed on (110) and (100) oriented crystal planes,respectively. In addition, such a difference in a silicon dioxide layerthickness becomes greater when O₂ is used as atmospheric gas than whenH₂ O is used as atmospheric gas. Thus, it is possible to control adifference in a silicon dioxide layer thickness caused due to crystalplanes of single crystal silicon by varying thermal oxidation conditionssuch as thermal oxidation temperature and atmospheric gas for thermaloxidation.

Thus, it is possible to arrange a thickness of the first gate insulator4 to be 1.5 to 2 times greater than a thickness of the second gateinsulator 4a.

Then, over a resultant is deposited and patterned a thin polysiliconlayer or a thin tungsten polycide layer containing phosphorus impuritiesto thereby form a gate electrode 5 on the first gate insulator 4 and agate electrode 5a on the second gate insulator 4a, as illustrated inFIG. 3C. In the formation of the gate electrode 5, it is necessary toform the gate electrode 5 only within the V-shaped recess 3 and not toform the gate electrode 5 outside the V-shaped recess 3. This is toprevent the gate electrode 5 from overlying on a thin silicon dioxidelayer formed on the flat main surface of the silicon substrate.

Then, arsenic (As) ions are implanted to a resultant through protectioninsulators 8 to thereby diffuse source diffusion layers 6, 6a and draindiffusion layers 7, 7a. Thus, in the V-shaped recess 3 is formed a MOStransistor having a high breakdown voltage of a gate oxide layer, whileon the flat main surface of the silicon substrate 1 is formed a MOStransistor having a normal breakdown voltage of a gate oxide layer. Theprotection insulators 8 are a portion of the second gate insulator 4a,namely, silicon dioxide layers through which arsenic ions are to beimplanted into the silicon substrate 1.

Embodiment 2!

Hereinbelow will be explained a semiconductor device and a method offorming the same in accordance with the second embodiment of theinvention with reference to FIGS. 5A to 5G and 6. FIGS. 5A to 5G arearranged in an order with which the method of fabricating asemiconductor device in accordance with the second embodiment is carriedout. In the second embodiment, a semiconductor device in accordance withthe invention is to be applied to DRAM. FIG. 6 is a top plan view ofmemory cell region and peripheral circuits region of the DRAM. FIGS. 5Ato 5G are cross-sectional views taken along the line A-B in FIG. 6.

As illustrated in FIG. 5A, a plurality of insulators 22 for isolatingelements from each other is formed on a main surface of a p-type siliconsubstrate 21 having (100) orientation to thereby define a memory cellarea 21a and a peripheral circuit area 21b. Each of the insulators 22has a depth of about 1 μm. Then, an oxide layer 23 is patterned on themain surface of the silicon substrate 21 so that predetermined areas areexposed. In the predetermined areas are to be formed a MOS transistorhaving a high breakdown voltage of a gate insulator, as mentioned later.The silicon substrate 21 is etched with the mask oxide layer 23 servingas a mask to thereby form a trench 24 in the predetermined areas withinthe memory cell area 21a. The trench 24 has a depth of about 0.5 μm. Thetrench 24 is formed so that side walls 25 of the trench 24 defines acrystal plane having (110) Si orientation or equivalents thereof. Abottom surface 26 of the trench 24 has (100) Si orientation. Then,arsenic (As) ions are implanted to the silicon substrate 21 to therebyform a bit line diffusion layer 27 below the bottom 26 of the trench 24.Dose of arsenic ion implantation is set to be about 1×10¹⁵ atoms/cm² sothat the bit line diffusion layer 27 contains arsenic by 5×10¹⁹atoms/cm³.

Next, the silicon substrate 21 is thermally oxidized at 800 degreescentigrade in the presence of H₂ O as atmospheric gas for oxidation. Asillustrated in FIG. 5B, the thermal oxidation causes first gateinsulators 28 and 28a composed of silicon dioxide and having a thicknessin the range of 12 nm to 14 nm to be formed on the side walls 25 and thebottom surface 26 of the trench 24. The thermal oxidation also causes asecond gate insulator 29 or a silicon dioxide layer having a thicknessof about 8 nm to be formed on the flat main surface of the siliconsubstrate 21 or on the crystal plane of the peripheral circuit region21b having (100) orientation.

Thicknesses of the gate insulators 28, 28a and 29 are varied dependentlyon a crystal plane of single crystal silicon, as having been mentionedwith reference to FIG. 4 in the first embodiment, and are furtherdependent on concentration of n-type impurities such as arsenic (As) andphosphorus (P) contained in the silicon substrate 21, as shown in FIG.7. Hereinbelow will be explained a relationship between a thickness ofthe gate insulators and concentration of impurities with reference toFIGS. 4 and 7.

FIG. 7 shows a relationship between a thickness of a silicon dioxide andthermal oxidation time in various concentrations of n-type impuritieswith respect to a silicon substrate having (100) orientation. Thermaloxidation temperature is 800 degrees centigrade, and atmospheric gas foroxidation is H₂ O. As is obvious from FIG. 7, high growth rate thermaloxidation occurs when concentration of n-type impurities is 5×10¹⁹atoms/cm³ and 1.5×10²⁰ atoms/cm³. As a result, a thickness of a silicondioxide layer is about 1.5 to 2 times greater than a thickness of asilicon dioxide layer thermally oxidized in the presence of n-typeimpurities having concentration of 1×10¹⁶ atoms/cm³. It should be notedthat thermal oxidation speed when concentration of n-type impurities is1×10¹⁶ atoms/cm³ is the same as thermal oxidation speed of a siliconsubstrate containing p-type impurities therein.

As having been described with reference to FIG. 4, thermal oxidationspeed is greater in (110) oriented crystal plane than in (100) orientedcrystal plane.

It is possible to control a thickness of a gate insulator byconcentration of n-type impurities and/or crystal plane of singlecrystal silicon. By carrying out such a control, for instance, the firstgate insulator 28 is about 12 nm thick on the side walls 25 of thetrench 24, while about 14 nm on the bit line diffusion layer 27containing arsenic by concentration of 5×10¹⁹ atoms/cm³. Thus, there canbe formed the first gate insulators 28 and 28a having a thickness about1.5 times greater than that of the second gate insulator 29.

Then, as illustrated in FIG. 5C, over a resultant is deposited a thingate electrode layer 30 having a thickness of about 300 nm. The thingate electrode layer 30 is composed of a polysilicon layer or a tungstenpolycide layer containing phosphorus therein. Then, a gate electroderesist mask 31 is patterned on the thin gate electrode layer 30 by meansof photolithography technique, and subsequently the thin gate electrodelayer 30 is anisotropically dry etched. For instance, mixture gas ofCl₂, SF₆, and HBr is used as etching gas. Thus, as illustrated in FIG.5D, transfer gate electrodes 32 and 32a are formed on the first gateinsulators 28 and 28a formed on the side walls 25 of the trench 24. Inaddition, a peripheral transistor gate electrode 33 is formed on thesecond gate insulator 29 formed on the flat main surface of the siliconsubstrate 21. The transfer gate electrodes 32 and 32a are formed inself-aligning manner during the above mentioned anisotropic dry etchingfrom the thin gate electrode layer 30 having remained on the side walls25 of the trench 24.

Then, arsenic ions are implanted into the silicon substrate 21 throughthe main surface thereof. Dose of arsenic ions is 1×10¹⁵ atoms/cm³, andimplantation energy is 50 KeV. By the ion implantation, there are formedcapacitor electrode diffusion layers 34, 34a and peripheral transistordiffusion layers 35, 36.

Then, as illustrated in FIG. 5E, a first interlayer dielectric 37 isdeposited over a resultant. The first interlayer dielectric 37 iscomposed of a silicon dioxide layer or BPSG, a silicon dioxide layercontaining boron glass and phosphorus glass therein, formed by CVD.Then, the first interlayer dielectric 37 is dry etched to thereby form abit line contact hole 38 above the bit line diffusion layer 27 andfurther a first contact hole 39 above the peripheral transistordiffusion layer 35. Subsequently, a thin polysilicon layer containingphosphorus therein is deposited and then patterned to thereby form bitlines 40, and at the same time the contact holes 38 and 39 are filledwith the thin polysilicon layer as conductive material.

Then, as illustrated in FIG. 5F, a second interlayer dielectric 41 isdeposited all over a resultant. The second interlayer dielectric 41 isformed by the steps of deposition of a silicon dioxide layer by means ofCVD and chemical and mechanical polishing (CMP) of a surface of thedeposited silicon dioxide layer. Then, the first and second interlayerdielectrics 37 and 41 are dry etched to thereby form capacitor electrodecontact holes 42 and 42a above the capacitor electrode diffusion layers34 and 34a, respectively. Subsequently, a polysilicon layer containingphosphorus therein is deposited over a resultant, and then patterned tothereby form capacitor electrodes 43 and 43a, and at the same time thecapacity electrode contact holes 42 and 42a are made filled with thepolysilicon layer as conductive material.

Then, as illustrated in FIG. 5G, there is formed a capacitor dielectric44 covering the capacitor electrodes 43 and 43a therewith. The capacitordielectric 44 is composed of a layer having high dielectric constantsuch as a silicon nitride and a tantalum oxide deposited by CVD, or alayer composed of combination thereof. A cell plate electrode 45 isformed by entirely covering the capacitor dielectric 44. The cell plateelectrode 45 is composed of a multi-layered structure of a thin titaniumnitride layer and a thin tungsten layer. Thereafter, a third interlayerdielectric 46 composed of silicon dioxide is deposited over a resultantby CVD. Then, the first, second, and third interlayer dielectrics 37,41, 46 are dry etched to thereby form a second contact hole 47 above theperipheral transistor diffusion layer 36. Then, a barrier conductivelayer 48 composed of laminated layers of titanium/titanium nitride isdeposited on the third interlayer dielectric 46, and the second contacthole 47 covered with the barrier conductive layer 48 is filled withtungsten as conductive material 49. Then, aluminum is deposited over thebarrier conductive layer 48 and patterned to thereby forminterconnections 50.

Thus, within the trench 24 of the silicon substrate 21 are fabricatedtwo MOS transistors each having a gate insulator comprising the firstgate insulator 28 or 28a composed of a relatively thick silicon dioxide,and also having a gate electrode comprising the transfer gate electrode32 or 32a. On the other hand, on the flat main surface of the siliconsubstrate 21 is fabricated a MOS transistor having a gate insulatorcomprising the second gate insulator 29 composed of a thin silicondioxide, and also having a gate electrode comprising the peripheraltransistor gate electrode 33.

FIG. 6 is a rough top plan view of the semiconductor device illustratedin FIGS. 5A to 5G. In FIG. 6, the capacitor electrodes 43, 43a and partsdisposed above the capacitor electrodes 43, 43a are omitted for betterunderstanding of the structure of the semiconductor device. Asillustrated in FIG. 6, the transfer gate electrodes 32 and 32a is formedon and along the side walls of the trench 24 shaped in an elongatedslit. For this reason, the trench 24 is designed to have nearly equallength to that of a word line of the memory cell. A pair of the transfergate electrodes 32 and 32a are cut off at longitudinal ends (notillustrated) of the trench 24. Thus, in the second embodiment, thetrench 24 extends across the insulators 22 for isolation of elements(see an area W encircled with a broken line). In addition, the trench 24is designed to have a smaller depth than a depth of the insulators 22.

In DRAM, a higher voltage is applied to a transfer gate electrode of amemory cell than a gate electrode of a peripheral transistor. Forinstance, in 256 megabit DRAM, a voltage of about 3V is applied to theformer, while a voltage of about 2V is applied to the latter. Thus, itcan be understood that the first and second gate insulators 28, 28a and29 can sufficiently withstand such voltages.

Embodiment 3!

Hereinbelow is explained a semiconductor device and a method forfabricating it in accordance with the third embodiment of the invention,with reference to FIGS. 8A to 8G. FIGS. 5A to 5G are arranged in anorder with which the method is carried out. In the third embodiment, asemiconductor device in accordance with the invention is to be appliedto DRAM similarly to the second embodiment.

As illustrated in FIG. 8A, a plurality of insulative layers 52 areformed on a main surface of a p-type (100) oriented silicon substrate 51for isolating elements from each other. The insulators 52 define an area51a in which a memory cell of DRAM is to be fabricated, and an area 51bin which a peripheral circuit is to be fabricated. The insulators 52 aredesigned to have a depth of about 1 μm. Then, a silicon dioxide layer 53is deposited over the main surface of the silicon substrate 51, and thenpatterned. Then, the silicon substrate 51 is dry etched with the maskoxide layer 53 serving as a mask so that first and second trenches 54and 54a are formed adjacent to each other. Each of the first and secondtrenches 54 and 54a has a depth of about 0.5 μm. The first and secondtrenches 54 and 54a are etched so that side walls 55 and 55a thereofhave (110) orientation similarly to the second embodiment. Bottomsurfaces 56 and 56a of the trenches 54 and 54a have (100) orientation.

After removal of the mask silicon dioxide layer 53, as illustrated inFIG. 8B, a surface of the silicon substrate 51 is subject to thermaloxidation to thereby form a protection insulative film 57 over aresultant except the insulators 52. Then, a resist mask 58 is formedonly in the area 51b, and arsenic ion is implanted into the memory cellregion 51a with the resist mask 58 serving as a mask. By the arsenic ionimplantation are formed a bit line diffusion layer 59, channel diffusionlayers 60 and 60a, and capacitor electrode diffusion layers 61 and 61ain the memory cell area 51a. Dose of arsenic ions is determined to beabout 1×10¹⁵ atoms/cm³ so that these diffusion layers contain As by theamount of about 5×10¹⁹ atoms/cm³. Thereafter, the resist mask 58 for ionimplantation is removed.

Then, the silicon substrate 51 is thermally oxidized at 800 degreescentigrade in the presence of H₂ O as atmospheric gas. As illustrated inFIG. 8C, by the thermal oxidation, a silicon dioxide layer having athickness of about 12 nm is formed on the side walls 55 and 55a of thefirst and second trenches 54 and 54a. By the thermal oxidation arefurther formed a silicon dioxide layer having a thickness of about 14 nmon the bit line diffusion layer 59, channel diffusion layers 60 and 60a,and capacitor electrode diffusion layers 61 and 61a. These silicondioxide layers work as a first gate insulator 62. On the other hand, asillustrated in FIG. 8C, a silicon dioxide layer or a second gateinsulator 63 having a thickness of about 8 nm is formed on the mainsurface of the silicon substrate 51 in the peripheral circuit area 51b.The reason why the first gate insulator 62 has a different thicknessfrom that of the second gate insulator 63 is the same as the reason setforth in the second embodiment.

Then, a thin gate electrode layer is deposited over a resultant. Overthe thin gate electrode layer is patterned a resist mask 64, and thenthe thin gate electrode layer is patterned with the resist mask 64serving as a mask to thereby form first and second transfer gateelectrodes 65 and 65a filling the trenches 54 and 54a therewith,respectively, as illustrated in FIG. 8D. On the second gate insulator 63is formed a peripheral transistor gate electrode 66. Then, theperipheral circuit area 51b is subject to As ion implantation and heattreatment with the result that peripheral transistor diffusion layers 67and 68 are diffused at opposite sides of the peripheral transistor gateelectrode 66.

After removal of the resist mask 64, a first interlayer dielectric 69 isdeposited all over a resultant. The first interlayer dielectric 69 isformed by the steps of depositing a silicon dioxide layer by CVD andflattening a surface of the deposited silicon dioxide layer by CMP.Thereafter, the first interlayer dielectric 69 is dry etched to therebyform a bit line contact hole 70 above the bit line diffusion layer 59and a first contact hole 71 on the peripheral transistor diffusion layer67. Then, a thin polysilicon layer containing phosphorus therein isdeposited over a resultant, and is patterned to thereby form bit lines72. While the formation of the bit lines 72, the bit line contact hole70 and the first contact hole 71 is filled with polysilicon serving as aconductor.

Then, as illustrated in FIG. 8F, a second interlayer dielectric 73 isdeposited all over a resultant. The second interlayer dielectric 73 isformed by the steps of depositing a silicon dioxide layer by CVD andflattening a surface of the deposited silicon dioxide layer by CMP,similarly to the first interlayer dielectric 69.

The following steps are identical with those of the second embodiment.As illustrated in FIG. 8F, above the capacitor electrode diffusionlayers 61 and 61a are formed capacitor electrode contact holes 74 and74a, respectively, and further above the capacitor electrode contactholes 74 and 74a are patterned capacitor electrodes 75 and 75a,respectively. The capacitor electrodes 75 and 75a are composed ofpolysilicon containing phosphorus. During the formation of the capacitorelectrodes 75 and 75a, the contact holes 74 and 74a are filled withpolysilicon.

Then, as illustrated in FIG. 8G, the capacitor electrodes 75 and 75a arecovered with a capacitor dielectric 76. Over the capacitor dielectric 76is deposited a cell plate electrode 77, over which is in turn depositeda third interlayer dielectric 78. Thereafter, a second contact hole 79are formed, and a barrier conductive layer 80 is deposited over aresultant. Then, the second contact hole 79 is filled with conductivematerial 81 such as tungsten (W), and then an aluminum layer isdeposited over a resultant and is patterned together with the barrierconductive layer 80 to thereby form interconnections 82 in the same wayas that of the second embodiment.

Thus, a transfer transistor of DRAM memory cell is formed in each of thetrenches. The gate insulator of the transfer transistor, or the firstgate insulator 62, is designed to have a greater thickness than that ofthe gate insulator of a transistor formed in the peripheral circuit area51b, or the second gate insulator 63.

In the embodiment, a channel region of a transfer transistor is formedat the side walls of the trenches 54 and 54a. Accordingly, the channellength of a transistor is greater than that of the second embodiment.Thus, the third embodiment has an advantage that a depth of a trench canbe designed to be shorter than that of the second embodiment.

In the above mentioned first to third embodiments, (100), (110) and(111) oriented crystal planed have been exemplified. However, it shouldbe noted that selection of crystal planes having orientations other than(100), (110) and (111) brings the same advantages as those brought bythe first to third embodiments. For instance, orientations nearly equalto (100), (110) and (111) may be selected.

While the present invention has been described in connection withcertain preferred embodiments, it is to be understood that the subjectmatter encompassed by way of the present invention is not to be limitedto those specific embodiments. On the contrary, it is intended for thesubject matter of the invention to include all alternatives,modifications and equivalents as can be included within the spirit andscope of the following claims.

What is claimed is:
 1. A method for simultaneously fabricating fieldeffect transistors (FETs) having different gate oxide breakdown voltageson a same substrate, said method comprising the steps of:selectivelyforming insulators for isolating a first FET from a second FET on asurface of a semiconductor substrate, said surface of said semiconductorsubstrate having a first crystal plane orientation; etching said surfaceof said semiconductor substrate to form a V-shaped recess having asidewall surface of a second crystal plane orientation, said secondcrystal plane orientation having a higher thermal oxidation speed thansaid surface of said semiconductor substrate having said first crystalplane orientation; thermally oxidizing said surfaces of said firstcrystal plane orientation to form a first gate insulator film for saidfirst FET and said second crystal plane orientation to form a secondgate insulator film for said second FET, said second gate insulator filmbeing thicker than said first gate insulator film wherein said secondFET has a higher breakdown voltage than said first FET; forming, aftersaid first and second gate insulator films, n-type impurity diffusionregions in said semiconductor substrate adjacent to an upper corner ofsaid V-shaped recess; and forming a conductive layer within saidV-shaped recess, said conductive layer being isolated from said firstgate insulator film formed on said first crystal plane orientation. 2.The method as recited in claim 1, wherein said first crystal planeorientation is (100) and said second crystal plane orientation is (111).3. The method as recited in claim 1, wherein said first crystal planeorientation is (100) and said second crystal plane orientation is (110).4. The method as recited in claim 1, wherein thermal oxidation speed ofsaid recesses is controlled with varying thermal oxidation temperature.5. The method as recited in claim 1, wherein thermal oxidation speed ofsaid recesses varies with atmospheric gas.